View source for Infineon BGA735L16

=== '''Infineon BGA735L16''' ===

'''Description'''

The BGA735L16 is a highly flexible, high linearity tri-band (2100, 1900/1800/2100, 800/900 MHz) low noise
amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the
BGA735L16 uses an advanced biasing concept in order to achieve high linearity.
The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-
chip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied.
For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input
and output matching network.

'''Features'''

# Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands)
# Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode (800 MHz / 1900 MHz / 2100 MHz)
# Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands)
# Standby mode (< 2 μA typ.)
# Output internally matched to 50 Ω
# Inputs pre-matched to 50 Ω
# 2kV HBM ESD protection
# Low external component count
# Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm)
# Pb-free (RoHS compliant) package

'''Datasheet''': http://xvilka.org/files/d-sheet/bga735l16.pdf