Difference between revisions of "Infineon BGA735L16"

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(Created page with '=== '''Infineon BGA735L16''' === '''Description''' The BGA735L16 is a highly flexible, high linearity tri-band (2100, 1900/1800/2100, 800/900 MHz) low noise amplifier MMIC for …')
 
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# Pb-free (RoHS compliant) package
 
# Pb-free (RoHS compliant) package
  
'''Datasheet''': http://xvilka.org/files/d-sheet/bga735l16.pdf
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'''Datasheet''': [[File:bga735l16.pdf]]
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[[Category:Hardware]]

Latest revision as of 15:25, 19 February 2011

Infineon BGA735L16

Description

The BGA735L16 is a highly flexible, high linearity tri-band (2100, 1900/1800/2100, 800/900 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA735L16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on- chip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network.

Features

  1. Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands)
  2. Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode (800 MHz / 1900 MHz / 2100 MHz)
  3. Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands)
  4. Standby mode (< 2 μA typ.)
  5. Output internally matched to 50 Ω
  6. Inputs pre-matched to 50 Ω
  7. 2kV HBM ESD protection
  8. Low external component count
  9. Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm)
  10. Pb-free (RoHS compliant) package

Datasheet: File:Bga735l16.pdf